Systems and methods for preparing epitaxially textured polycrystalline films

ABSTRACT

The disclosed subject matter relates to systems and methods for preparing epitaxially textured polycrystalline films. In one or more embodiments, the method for making a textured thin film includes providing a precursor film on a substrate, the film includes crystal grains having a surface texture and a non-uniform degree of texture throughout the thickness of the film, wherein at least a portion of the this substrate is transparent to laser irradiation; and irradiating the textured precursor film through the substrate using a pulsed laser crystallization technique at least partially melt the film wherein the irradiated film crystallizes upon cooling to form crystal grains having a uniform degree of texture.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional of and claims priority under 35 U.S.C.§121 to U.S. Utility application Ser. No. 12/275,720 (to be issued asU.S. Pat. No. 8,012,861 on Sep. 6, 2011), filed on Nov. 21, 2008entitled “Systems and Methods for Preparing Epitaxially TexturedPolycrystalline Films,” which claims priority under 35 U.S.C. §119(e) toU.S. Provisional Application Ser. No. 60/989,719, filed on Nov. 21, 2007entitled “Methods and Systems for Backside Laser Crystallization ofTextured Polycrystalline Film,” and the disclosure of which is herebyincorporated by reference in their entirety.

This application is related to commonly owned and co-pending applicationfiled on even date herewith and entitled “Systems and Methods forPreparation of Epitaxially Textured Thick Films,” the contents of whichare incorporated by reference in its entirety, which claims priority toU.S. Provisional Application Ser. No. 61/012,229, filed on Dec. 7, 2007,entitled “Methods And Systems for Backside Laser Induced EpitaxialGrowth of Thick Film,” the contents of which are incorporated byreference in its entirety.

All patents, patent applications and patent publications cited hereinare hereby incorporated by reference in their entirety.

BACKGROUND

The technology described herein relates to systems and methods forpreparing epitaxially textured polycrystalline films.

In recent years, various laser crystallization techniques forcrystallizing or improving the crystallinity of an amorphous orpolycrystalline semiconductor film have been investigated. Lasercrystallization has been used in the manufacture of a variety ofdevices, such as image sensors and displays, for example, active-matrixliquid-crystal display (AMLCD) devices. In the latter, a regular arrayof thin-film transistors (TFTs) are fabricated on an appropriatetransparent substrate and each transistor serves as a pixel controller.Large grain polycrystalline thin-films also have been used as seedlayers for polycrystalline thick-film solar cells.

Laser-induced crystalline growth in thin film semiconductors, whileimproving location and size of the crystalline structure, cannonetheless lead to a material with an intragrain defect density that isunacceptably high for certain microelectronics and solar cellapplications. Depending on experimental conditions, including the growthvelocity, film thickness and details of the irradiation, the defects canrange anywhere from closely spaced stacking faults or twin boundaries,to widely spaced sub-boundaries, e.g., several μm apart

In addition, the crystal orientation of the seed can influence defectformation. For example, in pulsed-laser irradiation experiments, it iscommonly found that {111} and in particular {100} surface orientationstypically can lead to a minimally defective material, and otherorientations, such as {110} or {112} can lead to defective growth in oneor more lateral growth directions. Conventional methods of obtaining asurface-oriented film (also referred to as a textured film) are known,including zone melt recrystallization (ZMR), solid phaserecrystallization, direct deposition techniques (including, chemicalvapor deposition (CVD) sputtering, and evaporation),surface-energy-driven secondary grain growth (SEDSGG) and pulsed lasercrystallization (SLS, multiple-pulse excimer laser annealing (ELA))methods.

SUMMARY

The disclosed subject matter relates to systems and methods forpreparing epitaxially textured polycrystalline films.

In one or more embodiments, the disclosed subject matter relates toproviding a precursor film on a substrate, the film includes crystalgrains having a surface texture and a non-uniform degree of texturethroughout the thickness of the film, wherein at least a portion of thethis substrate is substantially transparent to laser irradiation; andirradiating the textured precursor film through the substrate using apulsed laser crystallization technique to at least partially melt thefilm wherein the irradiated film crystallizes upon cooling to formcrystal grains having a uniform degree of texture.

In one or more embodiments, said pulsed laser crystallization techniquecomprises flood irradiation to partially melt the film leaving a thinportion of the film solid at the surface of the film, wherein the thinportion consists predominantly of crystal grains having acrystallographic orientation predominantly in one direction.

In one or more embodiments, said pulsed laser crystallization techniqueincludes sequential lateral solidification wherein a portion of thecrystal grains having a crystallographic orientation predominantly inone direction are completely melted and the melted portion laterallycrystallizes on said crystallographically oriented crystals.

In one or more embodiments, sequential lateral solidificationcrystallization includes generating a plurality of laser beam pulses,irradiating a selected region of a film with one of the plurality oflaser beam pulses, said beam having an intensity that is sufficient tomelt the irradiated portion of the film, wherein the irradiated portionof the film crystallizes upon cooling into a crystallographicorientation predominantly in one direction, and irradiating successiveportions of the selected region with the pulsed laser beams, tosubstantially crystallize the selected region of the film.

In one or more embodiments, the method includes directing the pluralityof laser beam pulses through a mask to generate a plurality of patternedlaser beams.

In one or more embodiments, the mask includes a dot-patterned mask.

In one or more embodiments, the mask includes opaque array patternswhich include at least one of dot-shaped areas, hexagonal-shaped areasand rectangular-shaped areas.

In one or more embodiments, the textured film is generated by the directdeposition methods.

In one or more embodiments, the direct deposition methods include one ofchemical vapor deposition, sputtering and evaporation.

In one or more embodiments, the pulsed laser crystallization methodsinclude one of sequential lateral solidification and multiple-pulseexcimer laser annealing processes.

In one or more embodiments, the predominant crystallographic orientationis a {111} orientation.

In one or more embodiments, the predominant crystallographic orientationis a {100} orientation.

In one or more embodiments, a system for processing a film on asubstrate, includes at least one laser for generating a plurality oflaser beam pulses, a film support for positioning the film that iscapable of movement in at least one direction, at least a portion ofsaid film support transparent to laser irradiation, a mask support,optics for directing a first set of laser beam pulses through a firstmask and through the transparent portion of the film support to generatea film having a uniform high degree of texture throughout the thicknessof the film and a controller for controlling the movement of the filmsupport in conjunction with frequency of the first set of and second setof laser beam pulses.

In one or more embodiments, the system includes a mask support.

In one or more embodiments, the textured film is generated by directdeposition methods.

In one or more embodiments, the direct deposition methods include one ofchemical vapor deposition, sputtering, and evaporation.

In one or more embodiments, the pulsed laser crystallization methodsinclude one of sequential lateral solidification and multiple-pulseexcimer laser annealing processes.

In one or more embodiments, a system for processing a film on asubstrate includes a substrate, wherein at least a portion of the thissubstrate is transparent to laser irradiation, a precursor film on asubstrate including crystal grains having a non-uniform degree oftexture throughout the thickness of the film, and means for irradiatingthe textured precursor film from the back side of the film using apulsed laser crystallization technique to re-orient the crystal grainsto create a thin film having a uniform high degree of texture throughoutthe thin film.

In one or more embodiments, said pulsed laser crystallization techniqueincludes flood irradiation wherein the crystal grains having acrystallographic orientation predominantly in one direction are notcompletely melted.

In one or more embodiments, said pulsed laser crystallization techniqueincludes sequential lateral solidification wherein a portion of thecrystal grains having a crystallographic orientation predominantly inone direction are completely melted and the melted portion laterallycrystallizes on said crystallographically oriented crystals.

In one aspect, a method for making a textured thin film includesproviding a textured precursor film comprising crystal grains having acrystallographic orientation predominantly in one direction on asubstrate, wherein at least a portion of the substrate is transparent tolaser irradiation; and irradiating the textured precursor film from theback side of the film using a pulsed laser crystallization technique,wherein crystal grains oriented in said crystallographic orientation aregrown on said crystallographically oriented crystals.

BRIEF DESCRIPTION OF THE DRAWING

The foregoing and other features and advantages of certain embodimentsdescribed herein will be apparent from the following more particulardescription, as illustrated in the accompanying drawings.

FIG. 1A is an illustrative schematic of a back side laser irradiationmethod in accordance with one or more embodiments described herein.

FIG. 1B is an illustrative schematic of another back side laserirradiation method in accordance with one or more embodiments describedherein.

FIG. 2 is a schematic illustration of a back side laser irradiationprocess in accordance with one or more embodiments described herein.

FIG. 3A is an illustrative schematic of a conventional textured film.

FIG. 3B is an illustrative schematic of top side laser irradiationprocesses in accordance with the prior art.

FIGS. 3C-D are illustrative schematics of back side laser irradiationprocesses in accordance with one or more embodiments described herein.

FIG. 4 is an illustrative schematic of a hybrid sequential lateralsolidification (SLS) method in accordance with the prior art.

FIG. 5 is a schematic illustration of a conventional textured film inwhich texture quality varies throughout the film and has the highestdegree of texture at the top surface of the film.

DETAILED DESCRIPTION

The disclosed subject matter relates to a method for creating a thinfilm which has a uniform degree of texture and in some preferredembodiments also a uniform microstructure. This is accomplished byirradiating a deposited textured thin film from the back side of thefilm prior to generating the required texture throughout the film,followed by optional crystallization of the film using a crystallizationtechnique that preserves the texture of the film, e.g., sequentiallateral solidification (“SLS”).

As shown in FIG. 4, previous methods of creating textured thin filmsinvolved two steps: (1) generating a textured precursor (102) and (2)generating the desired microstructure using SLS (104). This is method isreferred to herein as “hybrid SLS.”

Textured films can generally be generated either directly throughdeposition, or involving a post-deposition crystallization procedure.While various crystallization procedures have been demonstrated toresult in highly textured films, doing so requires an additionalprocessing step commonly involving equipment that is distinct from theequipment that is used for creating the uniform microstructure. The useof textured films obtained via deposition would thus be preferable, asit combines the deposition and texturing processes and therebyeliminates a processing step. However, thin films created usingdeposition methods do not typically have a uniform degree of texturethroughout the thickness of the film. For example, as shown in FIG. 5,after deposition of the thin film 200 on a substrate according to step102 in FIG. 4, most deposited films have a high degree of texturetowards the top of the film 201, e.g., at or near to the upper surfaceof the film, but have a low degree of texture towards the bottom of thefilm 202, e.g. at or near the substrate-film interface. Thus, the filmshown in FIG. 5 has a non-uniform degree of texture throughout thethickness of the film. Because of heat absorption and heat-flowconsiderations, pulsed-laser crystallization processes typically areseeded from material that is at or near the bottom of the film, i.e., ator near the interface of the film with the underlying substrate.Therefore when SLS is performed on the “textured” thin film to createthe desired microstructure (as shown in step 104 of FIG. 4), the lateralsolidification process is initiated from a seed grain that is located ator near the bottom of the film 202 and the ensuing growth from the seedgrain propagates laterally and throughout the thickness of the remainderof the completely molten area of the film. As stated above, in thisregion the film has low texture and, as such, the laterally grown grainswill likely have low texture as well.

As shown in FIG. 1A, in order to create a thin film from a depositedtextured precursor with both a uniform high degree of texture and a goodmicrostructure, the film may be pre-treated before the microstructurecontrolling step or the microstructure may be controlled in analternative way. After generation of a textured precursor film (302),the film is either treated with back side laser irradiation (303) toimprove texture throughout the film thickness before optionallygenerating a desired crystalline microstructure using lasercrystallization (304), or it is treated with back side lasercrystallization to induce controlled lateral growth to directly impose adesired microstructure in a way that preserves and expands the texture.The method disclosed in FIG. 1A is discussed in more detail below.

In 302 of the method described in FIG. 1A, a film precursor having anon-uniform degree of texture through the thickness of the film isproduced or provided through deposition. A textured deposited filmcontains grains having predominantly the same crystallographicorientation in at least a single direction. For example, if onecrystallographic axis of most crystallites in a thin polycrystallinefilm is oriented preferentially in a given direction or along a selectedaxis, we refer to the microstructure as having “uni-axial texture.” Forsome embodiments described herein, the preferential direction of theuni-axial texture is a direction normal to the surface of thecrystallites (or the top surface of the film). Thus, “texture” can referto a uni-axial surface texture of the grains as used herein. The degreeof texture can vary depending upon the particular application for thefilm. The “degree” of texture refers to the volume or percent ofcrystalline that are substantially oriented on the given direction.Films having at least 80%, or at least 90% of their surface oriented towithin 20 degrees or within 10 degrees or within 5 degrees of theselected axis are considered to be highly surface textured. For example,a higher degree of texture may be preferable for a thin film transistor(TFT) being used for a driver circuit as opposed to a TFT that is usedfor a switch circuit. In addition, a high degree of texture may bedesired in a thin film seed layer used to epitaxially grow a thicksilicon layer for solar applications.

In some instances, a textured film is obtained using conventional filmdeposition methods, but it was observed that the degree of the texturingvaried throughout the thickness of the film. Notably, the thin film canhave a differential in crystal texture between the upper and lowerportions of the film. For example, the thin film can have a poorertexture at the lower region of the film that is closest to thesubstrate.

The thin film can be a metal or semiconductor film, with a thicknessbetween about 50 nm to about 100 nm. The metals can include aluminum,copper, nickel, titanium, gold, and molybdenum. The semiconductor filmscan include conventional semiconductor materials, such as silicon,germanium, and silicon-germanium. Additional layers situated beneath orabove the metal or semiconductor film are contemplated. The additionallayers can be made of silicon oxide, silicon nitride and/or mixtures ofoxide, nitride or other materials that are suitable, for example, foruse as a thermal insulator to protect the substrate from overheating oras a diffusion barrier to inhibit diffusion of impurities from thesubstrate to the film. For the purposes of clarity, the laser techniqueis described with reference to silicon; however, it is apparent to thoseof skill in the art that the film can be a material susceptible to meltrecrystallization.

Conventional methods of obtaining a precursor film are used in FIG. 1A(301), including direct deposition techniques (including chemical vapordeposition (CVD), sputtering, evaporation), Other methods for producing{100} textured films include CVD and low-pressure CVD. See, e.g., J.Electrochem. Soc. Vol. 134, NO. 134, pp. 2541-2545 (October, 1987); J.Appl. Phys., Vol. 73, No. 12, pp. 8402-8411 (June, 1993); and J. Matl.Sci. Lett., Vol. 7, pp. 247-250 (1988). It is envisioned that othertexture-inducing methods can also be used in a similar way to generatethe textured precursors. As noted above, such texturing techniquestypically result in the highest degree of texture on the top surface ofthe film.

The deposited textured precursor film is supported on a substrate thatis transparent to laser energy over at least a portion of its area. By‘transparent to laser energy’, it is meant that laser energy used in thetreatment of the films described herein is not substantially absorbed bythe substrate (e.g., the thickness of the substrate is significantlyless than the absorption length therein). Thus, laser energy isselectively absorbed by the film, with concomitant heating and meltingof at least a portion of the film. Optionally, a capping layer can beused on the upper surface of the thin film to be crystallized. Thecapping layer can be made of a material, in particular, it can be madeusing materials that are inert to the textured precursor film (i.e.,materials that do not interact or react with the textured precursorfilm), are thermally stable and/or can be readily removed aftercompletion of the crystallization process, e.g., using hydrogen fluoride(“HF”) removal. Inorganic materials such as silicon oxynitride andsilicon nitride are suitable for use as capping materials. Conventionalcapping materials and deposition and removal techniques can be used inthis process. The use of capping layers can avoid complications arisingfrom reductions in the film's integrity during the irradiation process.For example, uring irradiation, the film can become discontinuous due tofluid flow, i.e., melting.

It has been observed that both capped and uncapped thin films can remainintact during back side irradiation procedures. The film stays largelyintact even in the absence of a cap layer during irradiation. It isspeculated that in uncapped samples, a thin native oxide layer can formor exist that is sufficiently strong and/or robust to support the filmduring laser-induced melting. In some other embodiments, the cappinglayer can serve as a supersubstrate that serves to reverse the directionof heat flow in the film away from the substrate, which can further helpequalize the texture gradient as is discussed in greater detail below.

Formation of textured films has been previously described in anapplication by James Im, U.S. Ser. No. 10/994,205, filed Nov. 18, 2004and entitled “System and Methods for Creating CrystallographicControlled Orientation Controlled PolySilicon Films,” the contents ofwhich are incorporated herein in its entirety by reference. In thatprocess, a film was pretreated to introduce a desired texture into thefilm and then crystallized using SLS laser irradiation to form theenhanced crystal growth that is typical of SLS.

However, a film that is deposited according to conventional methods,does not have a uniform degree of texture, and further lacks a uniformmicrostructure, i.e., the grains are randomly located on the surface andare of no particular size. As shown in FIG. 1A, the next step of themethod, back side irradiation (Step 303), creates the uniform degree oftexture throughout the thickness of the thin film. The laser thereforefirst passes through the substrate (or a transparent portion of thesubstrate) before entering the thin film. Back side irradiation takesadvantage of the location of the higher texture quality generated at thetop surface of the film. During back side irradiation, heat-flowconsiderations suggest that the lateral growth will proceed form the topside of the film, which will have the highest degree of texture.

FIG. 2 is a schematic illustration of a method of back side irradiationin one or more embodiments as substantially described herein. In FIG. 2,a laser 400 irradiates a back side 402 of a solid film 404, for example,silicon. As discussed previously, the top of the film 406 has a highdegree of texture—having a uniform distribution and orientation of {100}crystals—while the back side of the film 402 has weak or no texture. Thelaser 400 melts the solid silicon in the film 404 to create a liquid408. The silicon regrows from the melt with the highly textured {100}top of the film 406 serving as the seed layer for the grains. Therefore,the entire film, when cooled, has a high degree of texture, instead ofjust the top of the film 406.

Flood Irradiation

In one embodiment, the back side irradiation of the film can be floodirradiation. Flood Irradiation is an irradiation method in which a largearea of the film, preferably larger than the heat diffusion length ofthe film, is irradiated with a uniform beam of light. This process canbe used to induce melting in the film. Flood Irradiation is carried outfrom the back or the bottom side of the device through the substratesuch that the lower portions of the thin film are irradiated first. Asthe substrate is transparent to the laser energy, it remains cool andunheated in this radiation process. The energy of the Flood Irradiationis selected to partially or nearly-completely melt the thickness of thedeposited and textured film to induce regrowth of the film on the {100}oriented crystals only. Recall that the upper surfaces of the texturedfilms are of the highest quality. Therefore, by partially andpreferentially melting the lower portion of the thin film, aliquid/solid front is formed at a boundary of more highly texturedmaterial. As the molten silicon cools down and re-crystallizes from theupper surface down towards the substrate, the {100} texture will extendthroughout the substrate. These films have much higher quality textureand can be used in subsequent applications, e.g., in an optional pulsedlaser lateral growth process, to provide the desired large grain andgrain boundary location controlled films. Then these films can be usedas a textured layer in devices or other subsequent applications.

In some embodiments, the flood irradiation can be performed usingsystems similar to those used in the SLS process, which is discussed inmore detail below. These SLS systems are described in the followingpatents and applications: U.S. Pat. No. 6,322,625, entitled“Crystallization Processing of Semiconductor Film Regions on aSubstrate, and Devices Made Therewith,” as filed on Nov. 27, 1998; U.S.Pat. No. 6,368,945, entitled “Method and System for Providing aContinuous Motion Sequential Lateral Solidification,” as filed on Mar.16, 2000; U.S. Pat. No. 6,555,449, entitled “Methods for ProvidingUniform Large-Grained and Grain Boundary Location ManipulatedPolycrystalline Thin Film Semiconductors Using Sequential LateralSolidification,” as filed on Sep. 3, 1999; and U.S. Pat. No. 6,573,531,entitled “Systems and Methods Using Sequential Lateral Solidificationfor Producing Single or Polycrystalline Silicon Thin Films at LowTemperatures,” as filed on Sep. 3, 1999, and U.S. patent applicationSer. No. 12/063,810, entitled “High Throughput Crystallization of ThinFilms,” filed on Feb. 14, 2008, the entire disclosures of each areincorporated by reference.) For example, the flood irradiation can beperformed using a SLS system, but instead of front side irradating thefilm, the film is irradiated from the back side. Further if a mask isused in a two-dimensional projection SLS system, i.e., the beam has atwo dimensional character, the mask can be removed for the floodirradiation process. In this way, an SLS system can be used to performthe flood irradiation.

Additionally, the flood irradiation can be performed using onedimensional beam in ELA mode line scan systems. Such systems arediscussed in more detail in (U.S. patent application Ser. No.11/293,655, entitled “Line Scan Sequential Lateral Solidification ofThin Films,” as filed Dec. 2, 2005; U.S. patent application Ser. No.12/063,810, entitled “High Throughput Crystallization of Thin Films,” asfiled on Feb. 14, 2008; and U.S. patent application Ser. No. 11/373,772,entitled “Processes and Systems for Laser Crystallization Processing ofFilm Regions on a Substrate Utilizing a Line-type Beam and Structures ofSuch Film Regions,” as filed on Mar. 9, 2006, the entire disclosure ofeach are incorporated by reference). By operating in ELA mode, it ismeant that beam need not be sharpened to create a more uniform energydensity across the beam profile.

If either of the SLS or ELA systems are used, the fluence of therespective laser beams can be adjusted to be sufficient for only thepartial melting of the film. Alternatively, the beam produced by SLS orELA systems can be redirected through various types of optics to createa flood irradiation optimized beam to be delivered to the film.

Once a thin film with a uniform high degree of texture has been created,a uniform microstructure may be created in the thin film as shown in theFIG. 1A (304). This microstructure can be created using a variety ofcontrolled lateral growth methods or methods based on such, such as SLS,that offer control of the lateral growth over a length not exceedingthat at which defects may be formed for example through sub-boundaryformation or twinning. The lateral crystallization using controlledlateral growth or SLS results in “location-controlled growth” of grainboundaries and elongated crystals of a desired crystallographicorientation. Location-controlled growth referred to herein is defined asthe controlled location of grains and grain boundaries using particularbeam patterns and masks such as, for example, dot-patterned masks.

The process of sequential lateral solidification (SLS) generallyincludes the following: generating a plurality of laser beam pulses;directing the plurality of laser beam pulses through a mask to generatea plurality of patterned laser beams; irradiating a portion of aselected region of a film with one of the plurality of patterned beams,the beam having an intensity that is sufficient to melt throughout theentire thickness the irradiated portion of the film, where theirradiated portion of the film laterally crystallizes upon cooling. Theprocess further includes repositioning the film to irradiate asubsequent portion of the selected region with patterned beams, suchthat the subsequent position overlaps with the previously irradiatedportion, permitting further lateral re-growth of the crystal grains. Inone embodiment, successive portions of the selected region areirradiated such that the film is substantially crystallized in a singletraversal of the patterned beams over the selected region of the film.

These SLS systems and processes are described in U.S. Pat. No.6,322,625, entitled “Crystallization Processing of Semiconductor FilmRegions on a Substrate, and Devices Made Therewith,” issued Nov. 27,2001; U.S. Pat. No. 6,368,945, entitled “Method and System for Providinga Continuous Motion Sequential Lateral Solidification Issued,” issuedApr. 9, 2002; U.S. Pat. No. 6,555,449, entitled “Methods for ProducingUniform Large-Grained and Grain Boundary Location ManipulatedPolycrystalline Thin Film Semiconductors Using Sequential LateralSolidification,” issued Apr. 29, 2003; and U.S. Pat. No. 6,573,531,entitled “Systems and Methods Using Sequential Lateral Solidificationfor Producing Single or Polycrystalline Silicon Thin Films at LowTemperatures,” issued Jun. 3, 2002, issued to Dr. James Im, the entiredisclosures of which are incorporated herein by reference, and which areassigned to the common assignee of the present application.

An alternate SLS method is used in different embodiments and is referredto herein as the dot-patterned SLS process. This process uses a maskincorporating a dot pattern. The dot mask is an inverted mask, where thedots correspond to masked regions and the remainder of the mask istransparent. In order to fabricate large silicon crystals, the dotpattern can be sequentially translated about the points on the samplewhere such crystals are desired. For example, the dot mask can betranslated a short distance in the positive Y direction after a firstlaser pulse, a short distance in the negative X direction after a secondlaser pulse, and a short distance in the negative Y direction after athird laser pulse to induce the formation of large crystals. If theseparation distance between dots is greater than two times the lateralgrowth distance, a crystalline structure where crystals separated bysmall grained polycrystalline silicon regions can be generated. If theseparation distance is less or equal to two times the lateral growthdistance so as to avoid nucleation, a crystalline structure wherecrystals are generated. Further details about this SLS method aredescribed in U.S. Pat. No. 6,555,449, entitled “Methods for ProducingUniform Large-Grained and Grain Boundary Location ManipulatedPolycrystalline Thin Film Semiconductors Using Sequential LateralSolidification,” as filed Sep. 3, 1999, the entire teachings of whichare incorporated herein by reference.

In still other embodiments, the SLS process can employ a laser line beamthat can be shaped with laser optics into a long aspected beam with orwithout the use of a mask to shape the laser beam. Further details aboutthe SLS line beam method are found in A. Limanov and V. Borisov, Mat.Res. Soc. Symposium, Proc. Vol. 685E, D10.1.1 (2001); and U.S.Application Publication No. 2006/0254500, entitled Line Scan SequentialLateral Solidification of Thin Films, published on Nov. 16, 2006, thecontents of which are incorporated in their entirety by reference.

During the SLS process, the lower regions of the film crystallize firstbecause the heating through beam absorption is typically in the topregions of the film and because they are adjacent to the substrate,which can act as a heat sink. This allows the onset of thesolidification to be initiated from the lower side of the film. Thus,performing SLS on a deposited precursor, i.e., lacking the back sideflood irradiation step described herein, produces a thin film having arelatively low degree of texture.

Thus, it has been discovered that differences in the degree of thetexture between the base and the top of the film (pre-SLS) has adramatic effect on the quality and degree of the texture in the finalSLS-processed film. The methods and processes developed herein addressthis problem by creating a uniform degree of texture prior to performingSLS.

Back Side SLS

The irradiation on the back side of the thin film also can be SLSirradiation. Because laterally grown grain adopts the orientation of theseed, by selecting seed crystals of similar crystallographic orientation(texture), it is possible to grow large location-controlled(microstructure) grains of similar crystallographic orientation. Theembodiments of the disclosed subject matter are directed to particularcombinations of a texture-developing technology and the SLS process,discussed in detail above.

As shown in FIG. 1B, the method includes (1) providing a texturedprecursor film (306) and (2) back side SLS irradiation to improvemicrostructure and texture throughout the film thickness (308). Thetextured film 320, as shown in FIG. 3A, is provided according to theembodiments disclosed above. Note that there are regions of low texture,330 near the bottom of the textured film, towards the substrate 325, andregions of high texture 340 near the top of the textured film 320. Theback side SLS is performed in a similar manner as the front side SLSdisclosed above and shown in FIG. 3B except that the SLS is performedthrough the substrate 325 on the back side of the film, 320 shown inFIG. 3C.

In this process, the reverse effect is observed as is disclosed in theprior art crystallization techniques. Recall the previous discussionthat texture was poorer in samples that were top irradiated, becauselateral growth was seeded by grains located at or near the bottominterface of the film, as shown in FIG. 3B (where the radiation from thefront side of the thin film favors the lateral growth of poorly texturedcrystals 330 due to more rapid cooling at the substrate interfacebecause of heat loss through the substrate 325). By irradiating from theback side of the film 320, the opposite occurs. Initially, theirradiation creates a heat gradient in which the melted silicon 335 ishotter at the interface with the substrate because it is closest to thelaser. Therefore, crystallization will be initiated at the coolersurface of the film layer, as is shown in FIG. 2. When the laser shutsoff, the substrate acts as a heat sink and quickly draws the heat awayfrom the melted silicon 335 adjacent to the substrate. However, lateralgrowth has already set in before this happens and thus the texture ofthe crystallization is dominated by the top part of the film 340. Asshown in FIG. 3D, a capping layer 390, may further assist in maintainingthe integrity of the film 320 as well as offering a heat sink at the topto maintain for a longer period of time the reversed temperaturegradient, if needed.

While there have been shown and described examples of the disclosedsubject matter, it will be readily apparent to those skilled in the artthat various changes and modifications may be readily apparent to thoseskilled in the art that various changes and modifications may be madetherein without departing from the scope of the disclosed subject matteras defined by the appended claims. Accordingly, the disclosed subjectmatter is limited only by the following claims and equivalents thereto.

What is claimed is:
 1. A system for processing a film on a texturedsubstrate, comprising: at least one laser for generating a plurality oflaser beam pulses; a film support for positioning the textured film thatis capable of movement in at least one direction, at least a portion ofsaid film support transparent to laser irradiation; optics for directinga first set of laser beam pulses through a first mask and through thetransparent portion of the film support to generate a film having auniform high degree of texture throughout the thickness of the film; anda controller for controlling the movement of the film support inconjunction with frequency of the first set of and second set of laserbeam pulses.
 2. The system of claim 1 comprising a mask support.
 3. Thesystem of claim 1, wherein the textured film is generated by directdeposition methods.
 4. The system of claim 3, wherein the directdeposition methods comprise one of chemical vapor deposition,sputtering, and evaporation.
 5. The system of claim 1, wherein thepulsed laser crystallization methods comprise one of sequential lateralsolidification and multiple-pulse excimer laser annealing processes. 6.A system for processing a film on a substrate comprising: a substrate,wherein at least a portion of the this substrate is transparent to laserirradiation; a precursor film on a substrate comprising crystal grainshaving a non-uniform degree of texture throughout the thickness of thefilm; and means for irradiating the textured precursor film from theback side of the film using a pulsed laser crystallization technique tore-orient the crystal grains to create a thin film having a uniform highdegree of texture throughout the thin film.
 7. The system of claim 6,wherein said pulsed laser crystallization technique comprises floodirradiation wherein the crystal grains having a crystallographicorientation predominantly in one direction are not completely melted. 8.The system of claim 6, wherein said pulsed laser crystallizationtechnique comprises sequential lateral solidification wherein a portionof the crystal grains having a crystallographic orientationpredominantly in one direction are completely melted and the meltedportion laterally crystallizes on said crystallographically orientedcrystals.